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DIM400LSS17-A000
DIM400LSS17-A000
Single Switch IGBT Module
Replaces issue February 2002, version DS5497-2.0 DS5497-3.0 March 2002
FEATURES
s s s
10s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 400A 800A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s s s
Inverters Motor Controllers Induction Heating
2(E) 5(E1) 3(G1) 1(C) 4(C1)
The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM400LSS17-A000 is a single switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As: DIM400LSS17-A000 Note: When ordering, please use the whole part number.
3 5 4 2 1
Outline type code: L (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400LSS17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Partial discharge - per module Tcase = 68C 1ms, Tcase = 105C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS VGE = 0V Test Conditions Max. 1700 20 400 800 2976 30 4000 10 Units V V A A W kA2s V PC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400LSS17-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) Al2O3 Cu 20mm 8mm 175 Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 -40 150 125 125 5 2 C C C Nm Nm 8 C/kW 80 C/kW Min. Typ. Max. 42 Units C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400LSS17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 20mA, VGE = VCE VGE = 15V, IC = 400A VGE = 15V, IC = 400A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 400A IF = 400A, Tcase = 125C Cies LM RINT SCData Input capacitance Module inductance Internal transistor resistance Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 1000V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + LM I1 I2 Min. 4.5 Typ. 5.5 2.7 3.4 2.2 2.3 30 15 0.27 1850 1600 Max. 1 12 2 6.5 3.2 4.0 400 800 2.5 2.6 Units mA mA A V V V A A V V nF nH m A A
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400LSS17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 400A, VR = 900V, dIF/dt = 3000A/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 1150 100 120 250 250 150 4.5 100 230 70 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 400A, VR = 900V, dIF/dt = 2500A/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 1400 130 180 400 250 170 170 270 100 Max. Units ns ns mJ ns ns mJ C A mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400LSS17-A000
TYPICAL CHARACTERISTICS
900
800 Vce is measured at power busbars
and not the auxiliary terminals
Common emitter. Tcase = 25C
900
800 Vce is measured at power busbars
and not the auxiliary terminals
Common emitter. Tcase = 125C
700
700
Collector current, Ic - (A)
Collector current, Ic - (A) VGE = 20V 15V 12V 10V 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-emitter voltage, Vce - (V) 4.5 5
600 500 400 300 200 100 0
600 500 400 300 200 100 0 0 VGE = 20V 15V 12V 10V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
200
Conditions: Vce = 900V 175 Tc = 125C Rg = 4.7
Switching energy, Esw - (mJ)
400 Conditions: Vce = 900V IC = 400A Tc = 125C 300
150
Switching energy - (mJ)
125 100 75 50 25 0 0 100 200 300 Collector current, IC - (A) 400 500 Eoff Eon Erec
200
100 Eoff Eon Erec 0 0 4 8 12 Gate Resistance, Rg - (Ohms) 16
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400LSS17-A000
900
800 700 Tj = 25C 600
Foward current, IF - (A)
VF is measured at power busbars and not the auxiliary terminals
800 Chip 700 Module
Collector current, IC - (A) 3.5
600 500 400 300 200
500 Tj = 125C 400 300 200 100 0 0
0.5
2.0 1.0 1.5 2.5 Foward voltage, VF - (V)
3.0
Conditions: 100 Tcase = 125C, Vge = 15V, Rg(off) = 4.7ohms 0 0 200 400 600
800 1000 1200 1400 1600 1800
Collector emitter voltage, Vce - (V)
Fig. 7 Diode typical forward characteristics
1000
Fig. 8 Reverse bias safe operating area
400 350
100
300
Reverse current, IR - (A)
tp = 50s tp = 100s IC(max) DC
250 200 150 100 50 Tj = 125C 0 0 400 1200 800 Reverse voltage, VR - (V) 1600 2000
Collector current, IC - (A)
10
tp = 1 ms
1
0.1 1
Tvj = 125C, Tcase = 68C 10 100 1000 Collector-emitter voltage, Vce - (V) 1000
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400LSS17-A000
100
Diode Transistor
700
Transient thermal impedance, Zth (j-c) - (C/kW )
600
DC collector current, IC - (A)
IGBT Diode 1 Ri (C/KW) 0.9724 i (ms) 0.1596 Ri (C/KW) 3.0608 i (ms) 0.0064351 0.01 2 4.3807 2.2324 9.7188 1.3234 3 23.1461 39.8386 37.0227 31.1756 1 4 38.5083 176.9288 38.2219 97.9395 10 0.1 Pulse width, tp - (s)
500
400
10
300
200
100
1 0.001
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig. 13 Transient thermal impedance
Fig. 14 DC current rating vs case temperature
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400LSS17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
46.5 4x O6.5 3.5x6 4 27 6x5.5 16 46.5
1 5
61.4 48 40
3
2
24 2x M6 3x M4
20
29
23
5 106.4
Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M4): 2Nm (17lbs.ins) Module outline type code: L
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
36max
20
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DIM400LSS17-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2002 Publication No. DS5497-3 Issue No. 3.0 March 2002 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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